MRF1535FNT1
RF MOSFET LDMOS 12.5V TO272-6Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRF1535FNT1 is a high-power RF MOSFET utilizing LDMOS technology, designed for demanding RF applications. This TO-272-6 packaged device operates at a nominal drain-source voltage of 12.5V with a rated voltage of 40V, and is optimized for operation at 520MHz. It delivers 35W of output power with a typical gain of 13.5dB at a test current of 500mA. The current rating is 6A. This component is suitable for use in industrial, medical, and defense communications systems. The MRF1535FNT1 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-272BA |
| Current Rating (Amps) | 6A |
| Mounting Type | Chassis Mount |
| Frequency | 520MHz |
| Power - Output | 35W |
| Gain | 13.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-272-6 |
| Voltage - Rated | 40 V |
| Voltage - Test | 12.5 V |
| Current - Test | 500 mA |
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