MRF085HR3
RF MOSFET LDMOS 50V NI650Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRF085HR3 is a high-power RF MOSFET utilizing LDMOS technology, designed for demanding wireless infrastructure applications. This component operates within a frequency range of 1.8 MHz to 1.215 GHz, delivering 85W of output power with a typical gain of 25.6 dB at a 50V test voltage. Key specifications include a 100 mA test current and a 2µA current rating. The MRF085HR3 is housed in a NI-650H-4L package, suitable for chassis mounting and supplied on tape and reel. Its robust design makes it suitable for use in base station equipment and other high-frequency power amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-650H-4L |
| Current Rating (Amps) | 2µA |
| Mounting Type | Chassis Mount |
| Frequency | 1.8MHz ~ 1.215GHz |
| Configuration | Dual |
| Power - Output | 85W |
| Gain | 25.6dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-650H-4L |
| Voltage - Rated | 133 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
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