MMRF2004NBR1
RF MOSFET LDMOS 28V TO272-16Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MMRF2004NBR1 is a 2.7 GHz RF LDMOS power transistor. This device delivers 4W of output power with a typical gain of 28.5dB at a drain voltage of 28V and a drain current of 77mA. Designed for robust performance, it features a TO-272 WB-16 package for efficient thermal management. The MMRF2004NBR1 is suitable for demanding RF power amplification applications across various industries including telecommunications and industrial heating. The component is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-272-16 Variant, Flat Leads |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.7GHz |
| Power - Output | 4W |
| Gain | 28.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-272 WB-16 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 77 mA |
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