MMRF1320GNR1
RF MOSFET LDMOS 50V TO270-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the MMRF1320GNR1, a high-power RF MOSFET utilizing LDMOS technology. This component is designed for demanding RF power applications, operating at a frequency of 230MHz with a typical gain of 26.1dB. It delivers an impressive output power of 150W. The device is housed in a TO-270 WB-4 Gull package, suitable for surface mounting. Key electrical specifications include a test voltage of 50V and a rated voltage of 133V, with a test current of 100 mA. The MMRF1320GNR1 is commonly employed in base station infrastructure, industrial heating systems, and other high-frequency power amplification circuits. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-270BB |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 230MHz |
| Configuration | Dual |
| Power - Output | 150W |
| Gain | 26.1dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-270 WB-4 Gull |
| Voltage - Rated | 133 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
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