MMRF1316NR1
RF MOSFET LDMOS 50V TO270-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MMRF1316NR1 is a high-power LDMOS RF MOSFET designed for demanding applications. This device operates at 230 MHz, delivering a 300W output power with a typical gain of 27dB. It features a 50V test voltage and a 133V breakdown voltage, housed in a TO-270 WB-4 package for surface mounting. The MMRF1316NR1 is supplied on tape and reel. This component is commonly utilized in industrial, medical, and communication infrastructure where robust RF power amplification is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-270-4 |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 230MHz |
| Configuration | Dual |
| Power - Output | 300W |
| Gain | 27dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-270 WB-4 |
| Voltage - Rated | 133 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
Request a Quote
Clients Also Buy
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
MRF1513NT1
RF MOSFET LDMOS 12.5V PLD-1.5
AFG24S100HR5
RF MOSFET LDMOS NI360
