MMRF1314HR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MMRF1314HR5 is a high-power RF LDMOS transistor designed for demanding applications. This device operates at 1.4 GHz with a rated voltage of 105 V and a test voltage of 50 V. It delivers a substantial 1000 W of output power, with a typical gain of 17.7 dB at a test current of 100 mA. The MMRF1314HR5 utilizes LDMOS technology for efficient performance in high-frequency power amplification. Its robust design and power capabilities make it suitable for use in broadcast transmitters, industrial heating, and defense systems. The component is supplied in the NI-1230-4H package, presented on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-979A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.4GHz |
| Configuration | Dual |
| Power - Output | 1000W |
| Gain | 17.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4H |
| Voltage - Rated | 105 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
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