MMRF1314GSR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MMRF1314GSR5 is a high-power RF MOSFET utilizing LDMOS technology. This surface-mount component, packaged in NI-1230-4S GULL on tape and reel, operates at 1.4 GHz with a typical drain-source voltage of 50 V and a test current of 100 mA. It delivers a significant 1000W output power with a gain of 17.7 dB. The rated voltage is 105 V. This device is engineered for demanding applications in wireless infrastructure, broadcast transmitters, and industrial heating.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4S GW |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.4GHz |
| Configuration | Dual |
| Power - Output | 1000W |
| Gain | 17.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4S GULL |
| Voltage - Rated | 105 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
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