MMRF1312HSR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MMRF1312HSR5 is a high-power RF MOSFET. This LDMOS device operates at a frequency of 1.034 GHz and delivers a power output of 1000W. The component offers a gain of 19.6dB at a test current of 100 mA and a test voltage of 50V. It is housed in a NI-1230-4S package and features a chassis mount for robust integration. The rated voltage for this device is 112V. This RF MOSFET is commonly utilized in applications such as base station infrastructure and high-power RF amplification systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.034GHz |
| Configuration | Dual |
| Power - Output | 1000W |
| Gain | 19.6dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4S |
| Voltage - Rated | 112 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
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