MMRF1312HR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MMRF1312HR5 is an LDMOS RF power transistor designed for high-power applications. This device operates at a frequency of 1.03 GHz with a typical gain of 19.6 dB. Featuring a 50V test voltage and 100 mA test current, it is engineered for demanding RF power amplifier designs. The MMRF1312HR5 delivers a substantial 1000W of output power. Its technology is based on LDMOS, known for its robust performance in high-frequency power amplification. The component is supplied in the NI-1230-4H package, specified for chassis mounting, and is available on tape and reel. This RF MOSFET is suitable for use in professional mobile radio, broadcast, and industrial heating applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-979A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.03GHz |
| Configuration | Dual |
| Power - Output | 1000W |
| Gain | 19.6dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4H |
| Voltage - Rated | 112 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
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