MMRF1310HSR5
RF MOSFET LDMOS 50V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MMRF1310HSR5 is a high-power LDMOS RF power transistor designed for demanding applications. This dual-channel device operates at 230MHz, delivering a significant 300W output power with a gain of 26.5dB. It features a 50V test voltage and a rated voltage of 133V, making it suitable for robust RF power amplification. The MMRF1310HSR5 is housed in a NI-780S-4L package for surface mounting and is supplied on tape and reel. Its LDMOS technology ensures excellent performance in broadband communications, industrial heating, and broadcast transmitter systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 230MHz |
| Configuration | Dual |
| Power - Output | 300W |
| Gain | 26.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L |
| Voltage - Rated | 133 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
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