MMRF1308HSR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MMRF1308HSR5 is a high-power RF LDMOS transistor designed for demanding wireless infrastructure applications. This device operates at 230MHz, delivering a continuous output power of 600W with a typical gain of 25dB at a 50V test voltage and 100mA test current. The MMRF1308HSR5 features a voltage rating of 133V, ensuring robust performance in high-voltage environments. Its NI-1230-4S package, supplied on tape and reel, is optimized for chassis mounting, facilitating efficient thermal management. This component is a critical element in base station amplifiers, broadcast transmitters, and other high-frequency power amplification systems where reliability and performance are paramount.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 230MHz |
| Configuration | Dual |
| Power - Output | 600W |
| Gain | 25dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4S |
| Voltage - Rated | 133 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
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