MMRF1023HSR5
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
The NXP USA Inc. MMRF1023HSR5 is an RF MOSFET device designed for high-power applications. This LDMOS transistor operates at a drain-source voltage of 28V and delivers 66W of output power at 2.3GHz. It exhibits a gain of 14.9dB with a typical test current of 750mA. The MMRF1023HSR5 utilizes the NI-1230-4LS2L package, suitable for chassis mounting. This component is engineered for demanding RF power amplification in sectors such as base stations, industrial heating, and broadcasting. The device is supplied on tape and reel for efficient manufacturing processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4LS2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.3GHz |
| Power - Output | 66W |
| Gain | 14.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4LS2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 750 mA |
Request a Quote
Clients Also Buy
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
MRF6V2010NBR1
RF MOSFET LDMOS 50V TO272-2
MRF1513NT1
RF MOSFET LDMOS 12.5V PLD-1.5
