MMRF1022HSR5
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MMRF1022HSR5 is a high-power LDMOS RF power transistor designed for demanding applications. This component operates at 2.14 GHz, delivering a robust 63W of output power with a typical gain of 16.2dB. The device is rated for 28V test voltage and features a 65V breakdown voltage, ensuring reliable performance under significant electrical stress. Its NI-1230-4LS2L package and chassis mount capability facilitate integration into robust thermal management systems. The MMRF1022HSR5 is suitable for use in base station infrastructure and other high-frequency power amplification systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4LS2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.14GHz |
| Configuration | Dual |
| Power - Output | 63W |
| Gain | 16.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4LS2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 500 mA |
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