MMRF1019NR4
RF MOSFET LDMOS 50V PLD-1.5Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MMRF1019NR4 is a high-performance LDMOS RF power transistor designed for demanding applications. This surface-mount device operates at a frequency of 1.09GHz, delivering 10W of output power with a typical gain of 25dB. The MMRF1019NR4 is rated for a 100V breakdown voltage and tested at 50V, with a quiescent drain current of 10mA. Its PLD-1.5 package is suitable for automated assembly processes. This component finds application in base station infrastructure, industrial heating, and general-purpose RF power amplification. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PLD-1.5 |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.09GHz |
| Power - Output | 10W |
| Gain | 25dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | PLD-1.5 |
| Voltage - Rated | 100 V |
| Voltage - Test | 50 V |
| Current - Test | 10 mA |
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