MMRF1016HR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MMRF1016HR5 is a high-performance RF power MOSFET utilizing LDMOS technology. This component is designed for demanding RF applications, offering 125W of output power at a 225MHz frequency with a 25dB gain. Tested at 50V and 2.6A, it provides robust performance for linear amplification. The device is packaged in the NI-1230-4H (SOT-979A) and supplied on tape and reel. Its dual configuration and chassis mount capability make it suitable for integration into various RF power amplifier designs across industries such as telecommunications and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-979A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 225MHz |
| Configuration | Dual |
| Power - Output | 125W |
| Gain | 25dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4H |
| Voltage - Rated | 120 V |
| Voltage - Test | 50 V |
| Current - Test | 2.6 A |
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