MMRF1013HSR5
RF MOSFET LDMOS 30V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MMRF1013HSR5 is a high-power LDMOS RF MOSFET designed for demanding wireless applications. This component operates at 2.9GHz, delivering a nominal output power of 320W with a gain of 13.3dB. The device is rated for 65V and tested at 30V with a continuous drain current of 100mA. Its NI-1230-4S package is suitable for chassis mounting. The MMRF1013HSR5 is commonly utilized in base station infrastructure, point-to-point radio systems, and other high-frequency power amplification stages where reliability and performance are critical. This part is supplied on a Tape & Reel (TR) for efficient manufacturing integration.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.9GHz |
| Configuration | Dual |
| Power - Output | 320W |
| Gain | 13.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4S |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 100 mA |
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