MMRF1013HR5
RF MOSFET LDMOS 30V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MMRF1013HR5 is a high-power RF MOSFET utilizing LDMOS technology. This component is designed for demanding RF power amplification applications, operating at a frequency of 2.9GHz with a typical gain of 13.3dB. It delivers a substantial output power of 320W under test conditions. The device features a 30V test voltage and is rated up to 65V. The NI-1230-4H package, SOT-979A, is suitable for chassis mounting. This dual-configuration RF MOSFET is engineered for service in wireless infrastructure, radar systems, and other high-frequency power amplifier designs. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-979A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.9GHz |
| Configuration | Dual |
| Power - Output | 320W |
| Gain | 13.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4H |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 100 mA |
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