MMRF1011HSR5
RF MOSFET LDMOS 50V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc.'s MMRF1011HSR5 is a high-power RF LDMOS transistor designed for demanding applications. This device offers 330W of output power at a 1.4GHz operating frequency, with a typical gain of 18dB, making it suitable for robust RF power amplification. It operates with a 50V test voltage and a breakdown voltage of 100V, ensuring reliable performance under various conditions. The transistor features a NI-780S package for efficient thermal management via chassis mounting. This component is engineered for use in telecommunications infrastructure, industrial heating, and broadcast transmitters. Supplied on tape and reel, the MMRF1011HSR5 is optimized for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.4GHz |
| Power - Output | 330W |
| Gain | 18dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S |
| Voltage - Rated | 100 V |
| Voltage - Test | 50 V |
| Current - Test | 150 mA |
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