MMRF1009HR5
RF MOSFET LDMOS 50V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MMRF1009HR5 is a high-power RF MOSFET designed for demanding applications. This LDMOS device operates at 1.03GHz, delivering 500W of output power with a gain of 19.7dB. Rated at 110V, with a test voltage of 50V and a test current of 200mA, it is engineered for robust performance in high-frequency power amplification. The MMRF1009HR5 is housed in a NI-780H-2L package, suitable for chassis mounting. Its advanced LDMOS technology ensures efficient operation in base station infrastructure, broadcast, and industrial heating applications. This component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-957A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.03GHz |
| Power - Output | 500W |
| Gain | 19.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780H-2L |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 200 mA |
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