MMRF1007HR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MMRF1007HR5 is a high-power LDMOS RF MOSFET designed for demanding applications. This dual-configuration device operates at 1.03GHz, delivering a significant 20dB gain and a 1000W output power. It features a 50V test voltage and a 110V rated voltage, with a typical current draw of 150mA at the test condition. The NI-1230-4H package provides robust thermal management, making it suitable for high-frequency power amplification stages in industrial, defense, and broadcast communication systems. Supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4H |
| Current Rating (Amps) | - |
| Frequency | 1.03GHz |
| Configuration | Dual |
| Power - Output | 1000W |
| Gain | 20dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4H |
| Voltage - Rated | 110 V |
| Voltage - Test | 50 V |
| Current - Test | 150 mA |
Request a Quote
Clients Also Buy
BLF7G24LS-140,112
RF MOSFET LDMOS 28V SOT502B
BF1102R,115
RF MOSFET 5V 6TSSOP
BLF988S,112
RF MOSFET LDMOS 50V SOT539B
