MMRF1006HSR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MMRF1006HSR5 is a high-power RF MOSFET device utilizing LDMOS technology, designed for demanding RF power amplification applications. Operating at a rated voltage of 120V and offering a drain current of 150mA at a test voltage of 50V, this component delivers a significant output power of 1000W. It features a gain of 20dB and is optimized for operation at 450MHz, making it suitable for base station infrastructure, broadcast transmitters, and industrial heating systems. The device is supplied in the NI-1230S-4 package, delivered on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230S-4 |
| Current Rating (Amps) | - |
| Frequency | 450MHz |
| Power - Output | 1000W |
| Gain | 20dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230S-4 |
| Voltage - Rated | 120 V |
| Voltage - Test | 50 V |
| Current - Test | 150 mA |
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