MHTG1200HSR3
RF MOSFET GAN NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the MHTG1200HSR3, a high-power RF MOSFET utilizing Gallium Nitride (GaN) technology. This component is engineered for operation within the 2.4GHz to 2.5GHz frequency band, delivering an impressive 300W of output power. The MHTG1200HSR3 features a NI-780S-4L package, configured with 2 N-Channel enhancement-mode transistors, suitable for surface mount applications. This RF power transistor is designed for demanding applications in the wireless infrastructure and radar sectors, where high efficiency and power density are critical. The device operates at a rated voltage of 50V and is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.4GHz ~ 2.5GHz |
| Configuration | 2 N-Channel |
| Power - Output | 300W |
| Gain | - |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L |
| Voltage - Rated | 50 V |
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