MHT1108NT1
RF MOSFET LDMOS 32V 16DFNManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MHT1108NT1 is an RF LDMOS MOSFET designed for high-frequency applications. This component offers a 32V test voltage and a 65V rated voltage, with a typical test current of 110 mA. Operating at 2.45GHz, the MHT1108NT1 delivers a gain of 18.6dB and an output power of 12.5W. It is housed in a 16-DFN (4x6) package, suitable for surface mounting and supplied on tape and reel. This device is utilized in industries such as wireless infrastructure and industrial, medical, and scientific applications requiring robust RF performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 16-VDFN Exposed Pad |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 2.45GHz |
| Power - Output | 12.5W |
| Gain | 18.6dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | 16-DFN (4x6) |
| Voltage - Rated | 65 V |
| Voltage - Test | 32 V |
| Current - Test | 110 mA |
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