MHT1006NT1
RF MOSFET LDMOS 28V PLD-1.5WManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MHT1006NT1 is a high-performance RF power LDMOS transistor designed for demanding applications. This surface-mount component operates at a rated voltage of 65V and a test voltage of 28V, with a nominal current of 90 mA. It delivers 1.26W of output power at a frequency of 2.17GHz, exhibiting a gain of 21.7dB. The device is housed in a PLD-1.5W package and is supplied on tape and reel (TR). Its robust LDMOS technology makes it suitable for use in wireless infrastructure, base stations, and other RF power amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PLD-1.5W |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.17GHz |
| Power - Output | 1.26W |
| Gain | 21.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | PLD-1.5W |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 90 mA |
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