MHT1004GNR3
INTEGRATED CIRCUITS (ICS) MHT1004GNR3Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc.'s MHT1004GNR3 is a high-performance RF power MOSFET designed for demanding applications. This component, categorized under RF FETs, offers robust performance characteristics for advanced wireless infrastructure and professional radio communication systems. Engineered for efficiency and reliability, the MHT1004GNR3 is suitable for use in base stations, broadcast transmitters, and other high-frequency power amplification stages. Its advanced silicon LDMOS technology ensures excellent gain, linearity, and thermal management, critical for sustained operation in challenging environments. Supplied in Tray packaging, this device is readily integrated into volume manufacturing processes.
Additional Information
Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: TrayDownload Free CAD Model:
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