MHT1003NR3
RF MOSFET LDMOS OM780-2Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF MOSFET, part number MHT1003NR3, is a high-power LDMOS device operating within the 2.4GHz to 2.5GHz frequency range. This component delivers a typical gain of 15.9dB and a substantial output power of 250W, making it suitable for demanding RF power amplification applications. Encased in the OM-780-2 package, this surface-mount device is supplied on tape and reel. Its 32V voltage rating and LDMOS technology ensure robust performance in wireless infrastructure, satellite communications, and industrial heating systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-780-2 |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.4GHz ~ 2.5GHz |
| Power - Output | 250W |
| Gain | 15.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM-780-2 |
| Voltage - Rated | 32 V |
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