MHE1003NR3
RF MOSFET LDMOS 28V OM780-2Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the MHE1003NR3, an RF LDMOS MOSFET designed for high-frequency applications. This surface mount component operates within the 2.4GHz to 2.5GHz frequency range, delivering a power output of 53dBm with a gain of 14.1dB. Tested at 28V, the device is rated for 65V. The MHE1003NR3 is housed in the OM-780-2 package, supplied in Tape & Reel (TR) format, and is utilized in wireless infrastructure and telecommunications equipment. The current rating for testing is 50mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-780-2 |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 2.4GHz ~ 2.5GHz |
| Power - Output | 53dBm |
| Gain | 14.1dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM-780-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 50 mA |
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