BLL6H1214L-250,112
TRANS L-BAND RADAR LDMOS SOT502AManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BLL6H1214L-250-112 is an L-band RF power MOSFET designed for high-power, high-efficiency applications. This N-channel LDMOS transistor, packaged in a SOT502A (TO-270) through-hole configuration, delivers exceptional performance across the 1.2 to 1.4 GHz frequency range. Optimized for pulsed operation, it exhibits a typical power output of 250 Watts with a high gain of 14 dB at 1.3 GHz. The BLL6H1214L-250-112 is engineered for robust thermal management and features a high breakdown voltage, making it suitable for demanding radar systems, including automotive radar and general-purpose radar applications. Its advanced LDMOS technology ensures superior linearity and reliability in challenging RF environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
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