BLF6G27-75,112
RF MOSFET LDMOS 28V SOT502AManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. BLF6G27-75-112 is a high-performance RF Power MOSFET utilizing advanced LDMOS technology. This 28V device is engineered for demanding RF applications, delivering 9W of output power with a typical drain current of 600mA at 28V test voltage. The BLF6G27-75-112 is presented in a SOT-502A package, optimized for efficient thermal management and robust performance. Its robust construction and 28V rating make it suitable for use in base station infrastructure and other high-frequency communication systems. The device is supplied in trays for industrial handling.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-502A |
| Current Rating (Amps) | 18A |
| Mounting Type | Chassis Mount |
| Frequency | - |
| Power - Output | 9W |
| Gain | - |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | SOT502A |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 600 mA |
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