BLF6G10LS-135R,112
RF MOSFET LDMOS 28V SOT502BManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BLF6G10LS-135R-112 is an RF power LDMOS transistor designed for high-frequency applications. This device operates within the 871.5MHz to 891.5MHz frequency range, delivering a power output of 26.5W with a typical gain of 21dB. It is rated for a drain-source voltage of 65V and tested at 28V, with a continuous drain current capability of 950mA under test conditions. The BLF6G10LS-135R-112 is housed in a SOT-502B package, suitable for chassis mounting. This component finds application in cellular base stations and other wireless infrastructure where robust RF performance is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-502B |
| Current Rating (Amps) | 32A |
| Mounting Type | Chassis Mount |
| Frequency | 871.5MHz ~ 891.5MHz |
| Power - Output | 26.5W |
| Gain | 21dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | SOT502B |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 950 mA |
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