BLF4G20S-110B,112
RF MOSFET LDMOS 28V SOT502BManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
The NXP USA Inc. BLF4G20S-110B-112 is a high-power LDMOS RF power transistor designed for demanding applications. This device operates within the 1.93GHz to 1.99GHz frequency range, delivering a substantial 100W of output power with a typical gain of 13.5dB. Engineered for robust performance, it features a 28V test voltage and a 65V rated voltage. The BLF4G20S-110B-112 is housed in a SOT-502B package, suitable for chassis mounting. Its capabilities make it a suitable component for base station infrastructure and other wireless communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-502B |
| Current Rating (Amps) | 12A |
| Mounting Type | Chassis Mount |
| Frequency | 1.93GHz ~ 1.99GHz |
| Power - Output | 100W |
| Gain | 13.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | SOT502B |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 700 mA |
Request a Quote
Clients Also Buy
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
MRF6V2010NBR1
RF MOSFET LDMOS 50V TO272-2
MRF1513NT1
RF MOSFET LDMOS 12.5V PLD-1.5
