BLF4G20LS-130,112
RF MOSFET LDMOS 28V SOT502BManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BLF4G20LS-130-112 is a 130W LDMOS RF power transistor designed for high-frequency applications. This device operates within the 1.93GHz to 1.99GHz frequency range, delivering a typical gain of 14.6dB. It is rated for a drain-source voltage of 65V and is tested at 28V, with a continuous drain current capability of 900mA under test conditions. The component is housed in a SOT-502B package, suitable for chassis mounting. This RF MOSFET is commonly employed in base station infrastructure and public mobile radio systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-502B |
| Current Rating (Amps) | 15A |
| Mounting Type | Chassis Mount |
| Frequency | 1.93GHz ~ 1.99GHz |
| Power - Output | 130W |
| Gain | 14.6dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | SOT502B |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 900 mA |
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