BLD6G22LS-50,112
RF MOSFET LDMOS 28V CDFM4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BLD6G22LS-50-112 is a high-performance RF LDMOS transistor designed for demanding applications. This dual, common-source device operates at 2.14 GHz, delivering 8W of output power with a 14dB gain. Tested at 28V, it features a 170mA drain current for signal optimization. The BLD6G22LS-50-112 utilizes LDMOS technology for robust performance and is housed in a compact SOT-1130B (CDFM4) package, suitable for surface mounting. Its specifications make it ideal for use in broadband communications, base stations, and other high-frequency wireless infrastructure where reliability and efficiency are paramount.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-1130B |
| Current Rating (Amps) | 10.2A |
| Mounting Type | Surface Mount |
| Frequency | 2.14GHz |
| Configuration | Dual, Common Source |
| Power - Output | 8W |
| Gain | 14dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | CDFM4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 170 mA |
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