BLD6G21L-50,112
RF MOSFET LDMOS 28V CDFM4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the BLD6G21L-50-112, a high-performance RF power transistor utilizing LDMOS technology. This dual, common-source device is packaged in a CDFM4 (SOT-1130A) for robust thermal management and chassis mounting. Operating at a nominal 28V test voltage, it delivers 8W of output power at 2.02GHz with a gain of 14.5dB. The current rating is 10.2A, with a test current of 170mA. This component is suitable for demanding applications in cellular infrastructure and base stations.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-1130A |
| Current Rating (Amps) | 10.2A |
| Mounting Type | Chassis Mount |
| Frequency | 2.02GHz |
| Configuration | Dual, Common Source |
| Power - Output | 8W |
| Gain | 14.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | CDFM4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 170 mA |
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