BLA1011S-200,112
RF MOSFET LDMOS 36V SOT502BManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BLA1011S-200-112 is a high-power RF LDMOS transistor designed for demanding wireless infrastructure applications. This component operates within the 1.03 GHz to 1.09 GHz frequency range, delivering a significant 200W of output power with a typical gain of 13dB. It features a 36V test voltage and a 75V rated voltage, ensuring robust performance under various operating conditions. The device is housed in a SOT-502B package, suitable for chassis mounting. This LDMOS transistor is commonly employed in base station amplifiers and other high-frequency power amplification stages where efficiency and reliability are paramount.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-502B |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.03GHz ~ 1.09GHz |
| Power - Output | 200W |
| Gain | 13dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | SOT502B |
| Voltage - Rated | 75 V |
| Voltage - Test | 36 V |
| Current - Test | 150 mA |
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