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BF998WR,115

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BF998WR,115

RF MOSFET 8V CMPAK-4

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. BF998WR-115 is a high-performance RF MOSFET, specifically an N-Channel Dual Gate device. This component is designed for demanding RF applications, operating at frequencies up to 200MHz. It features a low noise figure of 0.6dB and a test current of 10mA, facilitating precise performance characterization. The device is rated for a voltage of 12V and tested at 8V, with a current rating of 30mA. Supplied in a CMPAK-4 (SC-82A, SOT-343) package, it is suitable for surface mount configurations. The BF998WR-115 is commonly employed in telecommunications, wireless infrastructure, and broadcast equipment. It is delivered in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Current Rating (Amps)30mA
Mounting TypeSurface Mount
Frequency200MHz
ConfigurationN-Channel Dual Gate
Power - Output-
Gain-
TechnologyMOSFET (Metal Oxide)
Noise Figure0.6dB
Supplier Device PackageCMPAK-4
Voltage - Rated12 V
Voltage - Test8 V
Current - Test10 mA

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