BF998WR,115
RF MOSFET 8V CMPAK-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BF998WR-115 is a high-performance RF MOSFET, specifically an N-Channel Dual Gate device. This component is designed for demanding RF applications, operating at frequencies up to 200MHz. It features a low noise figure of 0.6dB and a test current of 10mA, facilitating precise performance characterization. The device is rated for a voltage of 12V and tested at 8V, with a current rating of 30mA. Supplied in a CMPAK-4 (SC-82A, SOT-343) package, it is suitable for surface mount configurations. The BF998WR-115 is commonly employed in telecommunications, wireless infrastructure, and broadcast equipment. It is delivered in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 200MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | - |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 0.6dB |
| Supplier Device Package | CMPAK-4 |
| Voltage - Rated | 12 V |
| Voltage - Test | 8 V |
| Current - Test | 10 mA |
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