BF1217WR,115
RF MOSFET 5V CMPAK-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BF1217WR-115 is a high-performance RF MOSFET designed for demanding applications. This N-Channel dual-gate device operates with a 5V test voltage and 18mA current, delivering a typical gain of 30dB at 400MHz. Featuring a low 1dB noise figure, it is optimized for efficient signal amplification in RF front-end circuitry. The BF1217WR-115 is housed in a compact CMPAK-4 (SC-82A, SOT-343) surface-mount package, supplied on tape and reel for automated assembly. Its robust design makes it suitable for use in wireless communication systems, broadcast equipment, and other RF infrastructure. The device leverages advanced MOSFET technology to provide reliable performance and excellent RF characteristics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 400MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | 30dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1dB |
| Supplier Device Package | CMPAK-4 |
| Voltage - Rated | 6 V |
| Voltage - Test | 5 V |
| Current - Test | 18 mA |
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