BF1208D,115
RF MOSFET 5V SOT666Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BF1208D-115 is a high-performance RF MOSFET designed for demanding applications. This N-Channel dual-gate device, packaged in an SOT-666, operates at 5V with a typical test current of 19 mA. It delivers a robust 32dB gain at 400MHz, featuring a low noise figure of 0.9dB. The BF1208D-115 is constructed using advanced MOSFET technology and is suitable for surface-mount configurations. Its specifications make it a valuable component in wireless communication systems, broadcasting equipment, and other RF front-end circuitry. The device is supplied in tape and reel packaging for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 400MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | 32dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 0.9dB |
| Supplier Device Package | SOT-666 |
| Voltage - Rated | 6 V |
| Voltage - Test | 5 V |
| Current - Test | 19 mA |
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