BF1208,115
RF MOSFET 5V SOT666Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BF1208-115 is an N-Channel Dual Gate RF MOSFET designed for high-frequency applications. This device operates at 5V with a typical drain current of 19mA and features a gain of 32dB at 400MHz. Its SOT-666 package is suitable for surface mount assembly, provided in Tape & Reel. The BF1208-115 exhibits a low noise figure of 1.3dB, making it a strong candidate for RF amplification stages in telecommunications and broadcast equipment. The MOSFET technology offers efficient switching and amplification characteristics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 400MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | 32dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.3dB |
| Supplier Device Package | SOT-666 |
| Voltage - Rated | 6 V |
| Voltage - Test | 5 V |
| Current - Test | 19 mA |