BF1206,115
RF MOSFET 5V 6TSSOPManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BF1206-115 is a high-performance RF MOSFET designed for demanding wireless applications. This N-Channel Dual Gate device operates at a test voltage of 5V with a typical drain current of 18mA and a rated voltage of 6V. Featuring a gain of 30dB at 400MHz, the BF1206-115 is engineered for excellent RF amplification. Its low noise figure of 1.3dB makes it suitable for sensitive receiver front-ends. The component is provided in a compact 6-TSSOP, SC-88, SOT-363 surface mount package, delivered on tape and reel. This MOSFET is commonly utilized in the telecommunications and industrial sectors for its robust performance characteristics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 400MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | 30dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.3dB |
| Supplier Device Package | 6-TSSOP |
| Voltage - Rated | 6 V |
| Voltage - Test | 5 V |
| Current - Test | 18 mA |