BF1205,115
RF MOSFET 5V 6TSSOPManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. BF1205-115 is a high-performance RF MOSFET designed for demanding analog and RF applications. This N-Channel Dual Gate device operates with a 5V test voltage and a 12mA drain current, delivering a significant 26dB gain at 800MHz. Its robust design features a low 1.2dB noise figure, crucial for sensitive receiver front-ends. The BF1205-115 is housed in a compact 6-TSSOP package, suitable for surface mounting in applications such as mobile communications, base stations, and consumer electronics requiring efficient RF signal amplification. Manufactured by NXP USA Inc., this component is engineered for reliable performance in challenging RF environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | 26dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.2dB |
| Supplier Device Package | 6-TSSOP |
| Voltage - Rated | 10 V |
| Voltage - Test | 5 V |
| Current - Test | 12 mA |
Request a Quote
Clients Also Buy
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
MRF6V2010NBR1
RF MOSFET LDMOS 50V TO272-2
MRF1513NT1
RF MOSFET LDMOS 12.5V PLD-1.5
