BF1202WR,115
RF MOSFET 5V CMPAK-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BF1202WR-115 is an RF MOSFET designed for high-frequency applications. This N-Channel Dual Gate device operates with a 5V test voltage and a 12mA test current, delivering a gain of 30.5dB at 400MHz. Featuring a low noise figure of 0.9dB, it is suitable for demanding RF front-end designs. The BF1202WR-115 is housed in a CMPAK-4 surface mount package, supplied on tape and reel. Its robust MOSFET technology ensures reliable performance in wireless communication systems, broadcasting equipment, and general RF amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 400MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | 30.5dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 0.9dB |
| Supplier Device Package | CMPAK-4 |
| Voltage - Rated | 10 V |
| Voltage - Test | 5 V |
| Current - Test | 12 mA |
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