BF1201WR,135
RF MOSFET 5V CMPAK-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. BF1201WR-135 is a high-performance RF MOSFET designed for demanding applications. This N-Channel Dual Gate device, utilizing Metal Oxide technology, operates at a rated voltage of 10V and a test voltage of 5V. Delivering a gain of 29dB at 400MHz with a noise figure of only 1dB, it is optimized for efficient signal amplification. The component is supplied in a CMPAK-4 package, offering a compact surface mount solution for PCB integration. Its typical current rating is 30mA, with a test current of 15mA. This RF MOSFET finds applications in wireless communication systems, including mobile infrastructure and consumer electronics. The BF1201WR-135 is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 400MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | 29dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1dB |
| Supplier Device Package | CMPAK-4 |
| Voltage - Rated | 10 V |
| Voltage - Test | 5 V |
| Current - Test | 15 mA |