BF1109WR,115
RF MOSFET 9V CMPAK-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BF1109WR-115 is an RF MOSFET designed for high-frequency applications. This N-Channel Dual Gate device operates with a drain-source voltage of 9V (tested) and a rated voltage of 11V. Featuring a gain of 20dB at 800MHz, it is suitable for demanding RF front-end stages. The BF1109WR-115 offers a low noise figure of 1.5dB, crucial for signal integrity in sensitive receiver designs. Its CMPAK-4 (SC-82A, SOT-343) surface-mount package facilitates compact board layouts. This component is commonly utilized in wireless infrastructure, base stations, and other telecommunications equipment where efficient and low-noise RF amplification is paramount. The device is supplied on a Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | 20dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.5dB |
| Supplier Device Package | CMPAK-4 |
| Voltage - Rated | 11 V |
| Voltage - Test | 9 V |
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