BF1109R,215
RF MOSFET 9V SOT143RManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BF1109R-215 is an RF N-Channel Dual Gate MOSFET designed for high-frequency applications. This component operates at 800MHz, delivering a typical gain of 20dB and a low noise figure of 1.5dB. It is rated for a voltage of 11V with a test voltage of 9V and a current rating of 30mA. The BF1109R-215 is housed in a SOT-143R surface-mount package, supplied on tape and reel. This MOSFET is suitable for use in wireless communication systems and other RF circuitry.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-143R |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | 20dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.5dB |
| Supplier Device Package | SOT-143R |
| Voltage - Rated | 11 V |
| Voltage - Test | 9 V |
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