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BF1105WR,135

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BF1105WR,135

RF MOSFET 5V CMPAK-4

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. BF1105WR-135 RF MOSFET. This N-Channel Dual Gate device operates at 800MHz, offering a 20dB gain. Featuring a 1.7dB noise figure, it is designed for efficient RF signal amplification. The BF1105WR-135 is housed in a CMPAK-4 (SC-82A, SOT-343) surface mount package, supplied on tape and reel. Rated for 5V test voltage and 7V maximum voltage, this MOSFET is suitable for applications requiring high-frequency performance. It is utilized in various communication systems and RF front-end designs.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Current Rating (Amps)30mA
Mounting TypeSurface Mount
Frequency800MHz
ConfigurationN-Channel Dual Gate
Power - Output-
Gain20dB
TechnologyMOSFET (Metal Oxide)
Noise Figure1.7dB
Supplier Device PackageCMPAK-4
Voltage - Rated7 V
Voltage - Test5 V

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