BF1105WR,115
RF MOSFET 5V CMPAK-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. RF MOSFET, part number BF1165WR-115, is a high-performance N-Channel dual-gate device designed for demanding RF applications. This component operates at 800MHz, offering a typical gain of 20dB and a noise figure of 1.7dB, making it suitable for signal amplification stages. The BF1165WR-115 features a 5V test voltage and a rated voltage of 7V. Its CMPAK-4 (SC-82A, SOT-343) surface-mount package and Tape & Reel (TR) packaging facilitate efficient automated assembly. This RF MOSFET is commonly found in wireless communication systems and other high-frequency electronic designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | 20dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.7dB |
| Supplier Device Package | CMPAK-4 |
| Voltage - Rated | 7 V |
| Voltage - Test | 5 V |
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