BF1102R,115
RF MOSFET 5V 6TSSOPManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. BF1102R-115 is a high-frequency N-Channel Dual Gate MOSFET designed for RF applications. This component operates with a drain-source voltage (Vds) of 7V, and is tested at 5V with a drain current (Id) of 15mA. It exhibits a typical noise figure of 2dB and is specified for operation up to 800MHz. The BF1102R-115 is supplied in a compact 6-TSSOP package, suitable for surface mounting. Its current rating is 40mA. This device finds application in various RF front-end circuits and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 40mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | - |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 2dB |
| Supplier Device Package | 6-TSSOP |
| Voltage - Rated | 7 V |
| Voltage - Test | 5 V |
| Current - Test | 15 mA |
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