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BF1102,115

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BF1102,115

RF MOSFET 5V 6TSSOP

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. BF1102-115 is an N-Channel Dual Gate RF MOSFET designed for high-frequency applications. This component operates at 800MHz, with a test voltage of 5V and a rated voltage of 7V. It features a typical test current of 15mA and a current rating of 40mA, suitable for demanding RF circuitry. The BF1102-115 is housed in a compact 6-TSSOP, SC-88, SOT-363 package, facilitating surface mount integration. With a noise figure of 2dB, it is optimized for signal integrity in RF front-end stages. This device finds application in various communication systems, including wireless infrastructure and consumer electronics requiring efficient RF signal amplification and switching. The BF1102-115 is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Current Rating (Amps)40mA
Mounting TypeSurface Mount
Frequency800MHz
ConfigurationN-Channel Dual Gate
Power - Output-
Gain-
TechnologyMOSFET (Metal Oxide)
Noise Figure2dB
Supplier Device Package6-TSSOP
Voltage - Rated7 V
Voltage - Test5 V
Current - Test15 mA

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