BF1101WR,115
RF MOSFET 5V CMPAK-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. BF1101WR-115 is an RF MOSFET designed for high-frequency applications. This N-Channel Dual Gate device, manufactured by NXP USA Inc., operates with a test voltage of 5V and a rated voltage of 7V. It features a typical drain current of 12mA at 800MHz, with a current rating of 30mA. The noise figure is rated at 1.7dB. Packaged in a CMPAK-4 (SC-82A, SOT-343) surface mount configuration, it is supplied on tape and reel. This component is suitable for use in various RF communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | - |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.7dB |
| Supplier Device Package | CMPAK-4 |
| Voltage - Rated | 7 V |
| Voltage - Test | 5 V |
| Current - Test | 12 mA |
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